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| 2N4957UB Silicon PNP Transistor Data Sheet Description Semicoa Semiconductors offers: * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N4957UBJ) * JANTX level (2N4957UBJX) * JANTXV level (2N4957UBJV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Applications * General purpose * VHF-UHF amplifier transistor * PNP silicon transistor Features * * * * Hermetically sealed TO-72 metal can Also available in chip configuration Chip geometry 0006 Reference document: MIL-PRF-19500/426 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available TC = 25C unless otherwise specified Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25C Derate linearly above 25C Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT TJ TSTG Rating 30 30 3 30 200 1.14 -65 to +200 -65 to +200 Unit Volts Volts Volts mA mW mW/C C C Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N4957UB Silicon PNP Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 Test Conditions IC = 0.5 mA, VCE = 10 Volts IC = 2 mA, VCE = 10 Volts IC = 5 mA, VCE = 10 Volts IC = 5 mA, VCE = 10 Volts TA = -55C Symbol V(BR)CEO ICBO1 ICBO2 ICBO3 IEBO1 Test Conditions IC = 1 mA VCB = 20 Volts VCB = 30 Volts VCB = 20 Volts, TA = 150C VEB = 3 Volts Min 30 100 100 100 100 Typ Max Units Volts nA A A A Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% DC Current Gain Min 15 20 30 10 Typ Max Units 165 Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Common-Emitter small signal power gain Noise Figure Collector Base time constant Collector Base feedback capacitance Symbol |hFE| GPE NF rb'CC Ccb Test Conditions VCE = 10 Volts, IC = 2 mA, f = 100 MHz IC = 2 mA, VCE = 10 Volts, f = 450 MHz VCE = 10 Volts, IC = 2 mA, f = 450 MHz, RL = 50 VCB = 10 Volts, IE = 2 mA, f = 63.6 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz Min 12 17 Typ Max 36 25 3.5 1 8 0.8 dB dB ps pF Units Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com |
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